Electronic materials

Wayne Anderson

Dr. Anderson has a wide range of interests in electronic materials and devices. Early work dealt with solid-state microwave devices, Schottky and metal-insulator-semiconductor solar cells, deposition of thin-film silicon, amorphous silicon solar cells, radiation effects in semiconductors, and organic semiconductors. More recent work has included low-cost P/N junction solar cells, heterojunction solar cells, conductive-transparent oxides, high barrier height Schottky diodes and Si:Ge applications. Current work includes Schottky devices on InP, InGaAs or ZnSSe, field effect transistors, thin-film Si for solar cells, applications of thin-film Si, thin-film capacitors, thin-film resistors, superconductors and flat panel displays.

Dr. Anderson is funded by the National Science Foundation and Ohmcraft. His recent research efforts include:

• Hot-Wire Photonics, Science and Technology
• Thin-Film Transistors on Plastic and Glass Substrates Using Silicon Deposited by Microwave Plasma ECR-CVD
• Metal-Induced Grown Si Nanostructures for Large-Area-Device Applications
• Thin Film Transistors on Nanocrystalline Silicon Directly Deposited by Microwave Plasma CVD

One of his goals is to develop thin film deposition techniques to realize low-cost, large-area solar powered systems and thin-film transistors for advanced displays. His most recent project involves solar cells for space-based system.

Three concepts are under investigation. One utilizes thin silicon films on a flexible metal substrate topped with nanowires to achieve an efficiency of 12- 16% with a light weight module. The second offers an extremely high efficiency, potentially exceeding 40%, utilizing a graded bandgap compound semiconductor which converts most of the solar spectrum to electric power. The third will use InGaN thin films that have potential to achieve 70% efficiency.

Metal-Induced Growth (MIG) produces 5- 10 micron thick microcrystalline Si films on flexible substrates. These will be topped with Si or NiSi nanowires to provide high optical absorption and good electrical contact.

 

The bandgap of In x Ga 1- x N has been recently demonstrated to span energies from 3. 4 eV to 0. 7 (UV to IR). This broad spectral response is promising for highly efficient tandem solar cells that can approach 70%. Much fundamental research remains to make this possible but continued improvements in materials make this a worthwhile candidate solar cell material.