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for Advanced Spectroscopic Evaluation 119 Bonner Hall University at Buffalo Buffalo, NY 14260-1900, USA
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The Laboratory for Advanced Spectroscopic Evaluation (LASE), was founded in 1995 to study and characterize semiconductor devices consisting of homo- and hetero-structures of III-V materials, such as GaAs/InGaAs/AlGaAs and GaN/AlGaN/InGaN, and II-VI materials such as ZnSe/ZnCdSe/ZnTe and ZnO. Over the years, we have expanded our research to include characterization and fabrication. We routinely use ultrafast spectroscopy to characterized semiconductor nanostructures. In addition, we fabricate devices from III-Nitrides materials and hybrid organic/semiconductor nanocrystal nanostructures. In addition, we are also involved in developing optical techniques in biosensing and non-destructive testing. The current focus of our lab is on new materials and devices for sensors and photovoltaics.
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Fabrication |
Optical Characterization |
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Optical
non-destructive testing techniques and tools
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III-Nitride
materials and devices:
e.g. InN, InGaN, AlGaN, GaN/AlN, InGaN/GaN Heterostructures |
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InGaN/GaN
Optoelectronic Biosensors |
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Fabrication of Photovoltaic Devices (Solar Cells)
Fabrication of Hybrid OLEDs
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Semiconductor Nanocrystals for Hybrid Organic Photovoltaics and Light Emitting Devices
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